R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 351

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

9.11.12 Fast-Page Access Operation
Besides an accessing method in which this LSI outputs a row address every time it accesses the
SDRAM (called full access or normal access), some SDRAMs have a fast-page mode function in
which fast speed access can be achieved by modifying only a column address with the same row
address output when consecutive accesses are made to the same row address.
The fast-page mode can be used by setting the BE bit in DRAMCR to 1.
Figure 9.71 Connection Example of DQM Byte/Word Control
(Address shifted by 8 bis)
This LSI
D15 to D0
OE/CKE
DQMLU
DQMLL
RAS
CAS
SDφ
A12
A11
A10
WE
CS
A9
A8
A7
A6
A5
A4
A3
A2
A1
64-Mbit synchronous DRAM
(1 Mwords × 16 bits × 4 banks)
10-bit column address
RAS
CAS
WE
DQMU
DQML
CLK
CKE
CS
A11 (BA1)
A10 (BA0)
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ15 to DQ0
Rev. 2.00 Oct. 21, 2009 Page 317 of 1454
Row address:
Column address:
Bank select address:
Section 9 Bus Controller (BSC)
A11 to A0
A9 to A0
A11/A10
REJ09B0498-0200