R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 283

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

9.6.5
The read strobe timing can be modified in area units by setting bits RDN7 to RDN0 in RDNCR to
1.
Note that the RD timing with respect to the DACK and EDACK rising edge will change if the
read strobe timing is modified by setting RDNn to 1 when the DMAC or the EXDMAC is used in
the single address mode.
Figure 9.22 shows an example of timing when the read strobe timing is changed in the basic bus 3-
state access space.
Read Strobe (RD) Timing
RDNn = 0
RDNn = 1
DACK or EDACK
Bφ
Address bus
CSn
AS
RD
Data bus
RD
Data bus
BS
RD/WR
Notes:
Figure 9.22 Example of Read Strobe Timing
1. n = 0 to 7
2. When DKC and EDKC = 0
T
1
Bus cycle
T
2
Rev. 2.00 Oct. 21, 2009 Page 249 of 1454
Section 9 Bus Controller (BSC)
T
3
REJ09B0498-0200