R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1179

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
(7)
• H8SX/1662
• H8SX/1665
Bit
Bit Name
Initial Value
R/W
Bit
Bit Name
Initial Value
R/W
Bit
Bit Name
Initial Value
R/W
Bit
Bit Name
Initial Value
R/W
FEBS specifies the erase block number. Settable values range from 0 to 13 (H'0000 to
H'000D). A value of 0 corresponds to block EB0 and a value of 13 corresponds to block EB13.
An error occurs when a value over the range (from 0 to 13) is set.
FEBS specifies the erase block number. Settable values range from 0 to 15 (H'0000 to
H'000F). A value of 0 corresponds to block EB0 and a value of 15 corresponds to block EB15.
An error occurs when a value over the range (from 0 to 15) is set.
Flash Erase Block Select Parameter (FEBS: General Register ER0 of CPU)
R/W
R/W
R/W
R/W
31
23
15
7
R/W
R/W
R/W
R/W
30
22
14
6
R/W
R/W
R/W
R/W
29
21
13
5
R/W
R/W
R/W
R/W
28
20
12
4
R/W
R/W
R/W
R/W
27
19
11
3
Rev. 2.00 Oct. 21, 2009 Page 1145 of 1454
R/W
R/W
R/W
R/W
26
18
10
2
Section 25 Flash Memory
R/W
R/W
R/W
R/W
25
17
1
9
REJ09B0498-0200
R/W
R/W
R/W
R/W
24
16
0
8

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