R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 225

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
9.2.5
CSACR selects whether or not the assertion periods of the chip select signals (CSn) and address
signals for the basic bus, byte-control SRAM, burst ROM, and address/data multiplexed I/O
interface are to be extended. Extending the assertion period of the CSn and address signals allows
the setup time and hold time of read strobe (RD) and write strobe (LHWR/LLWR) to be assured
and to make the write data setup time and hold time for the write strobe become flexible.
Bit
Bit Name
Initial Value
R/W
Bit
Bit Name
Initial Value
R/W
RDNn = 0
RDNn = 1
Figure 9.2 Read Strobe Negation Timing (Example of 3-State Access Space)
CS Assertion Period Control Registers (CSACR)
CSXH7
CSXT7
R/W
R/W
15
0
7
0
RD
Data
RD
Data
CSXH6
CSXT6
R/W
R/W
14
0
6
0
CSXH5
CSXT5
R/W
R/W
13
0
5
0
T
1
CSXH4
CSXT4
R/W
R/W
12
0
4
0
Bus cycle
T
CSXH3
CSXT3
2
R/W
R/W
11
0
3
0
Rev. 2.00 Oct. 21, 2009 Page 191 of 1454
CSXH2
CSXT2
R/W
R/W
10
0
2
0
Section 9 Bus Controller (BSC)
T
3
(n = 7 to 0)
CSXH1
CSXT1
R/W
R/W
9
0
1
0
REJ09B0498-0200
CSXH0
CSXT0
R/W
R/W
8
0
0
0

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