R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1205

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

7. Switching of the memory MATs by FMATS should be needed when programming/erasure of
8. When the program data storage area is within the flash memory area, an error will occur even
In consideration of these conditions, the areas in which the program data can be stored and
executed are determined by the combination of the processing contents, operating mode, and bank
structure of the memory MATs, as shown in tables 25.8 to 25.12.
Table 25.8 Executable Memory MAT
Note:
Processing Contents
Programming
Erasing
the user MAT is operated in user boot mode. The program which switches the memory MATs
should be executed from the on-chip RAM. For details, see section 25.11, Switching between
User MAT and User Boot MAT. Make sure you know which memory MAT is currently
selected when switching them.
when the data stored is normal program data. Therefore, the data should be transferred to the
on-chip RAM to place the address that the FMPDR parameter indicates in an area other than
the flash memory.
*
Programming/Erasure is possible to the user MAT.
User Program Mode
See table 25.9
See table 25.10
Operating Mode
Rev. 2.00 Oct. 21, 2009 Page 1171 of 1454
User Boot Mode*
See table 25.11
See table 25.12
Section 25 Flash Memory
REJ09B0498-0200