R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 331

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(2)
Some DRAMs have a self-refresh mode (battery backup mode). The self-refresh mode is a kind of
standby mode and refresh timing and refresh address are controlled internally.
The self-refresh mode is selected by setting the RFSHE and SLFRF bits in REFCR to 1. The CAS
and RAS signals are output as shown in figure 9.56 by executing the SLEEP instruction. Then,
DRAM enters self-refresh mode.
When a CBR refresh is requested on a transition to the standby mode, the CBR refresh is first
performed and then the self-refresh mode is entered.
When the self-refresh mode is used, do not clear the OPE bit in SBYCR to 0.
For details, see section 28.2.1, Standby Control Register (SBYCR).
Self-Refresh Mode
RD/WR
LUCAS
LLCAS
RAS
WE
Bφ
BS
T R
p
T R
Figure 9.56 Self-Refresh Timing
r
High
High
High
Software
standby
Rev. 2.00 Oct. 21, 2009 Page 297 of 1454
Section 9 Bus Controller (BSC)
T R
c3
T R
REJ09B0498-0200
c4