R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 373

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(5)
With DKC = 1 or EDKC = 1, the DACK and EDACK signals are asserted a half cycle earlier
compared to the case when DKC = 0 or EDKC = 0.
In fast-page access, the DACK signal continues to be low. In this case, bus cycles can be
distinguished by the BS output timing.
Figure 9.89 shows an output timing example of the DACK and EDACK signals when DKC = 1 or
EDKC = 1, and DDS = 1 or EDDS = 1. Figure 9.90 shows an output timing example of the DACK
and EDACK signals when DKC = 1 or EDKC = 1, and DDS = 0 or EDDS = 0.
Figure 9.89 Output Timing Example of DACK and EDACK when DKC = 1 or EDKC = 1
When DKC = 1
DACK or EDACK
Precharge-sel
Address bus
D15 to D8
SDRAMφ
D7 to D0
DQMLU
DQMLL
RD/WR
RAS
CAS
CKE
WE
CS
BS
and DDS = 1 or EDDS = 1 (Write)
PALL
T
Row address
p
ACTV
address
Row
T
r
Column address 1
NOP
T
c1
High
WRIT
T
c2
Rev. 2.00 Oct. 21, 2009 Page 339 of 1454
Column address 2
NOP
T
c1
Section 9 Bus Controller (BSC)
WRIT
T
c2
REJ09B0498-0200