R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 352

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 9 Bus Controller (BSC)
(1)
two cycles are the same, a column address output cycle follows. The row address bits to be
compared are decided by bits MXC1 and MXC0 in DRAMCR.
A fast-page mode access is performed when the access data size exceeds the bus width of the
SDRAM and when consecutive accesses to the SDRAM are generated.
Figures 9.72 and 9.73 show longword access timing of the 16-bit bus SDRAM and word access
timing of the 8-bit bus SDRAM, respectively.
Rev. 2.00 Oct. 21, 2009 Page 318 of 1454
REJ09B0498-0200
When access cycles to the SDRAM space are continued and the row addresses of the consecutive
Fast-Page Mode Operation Timing
Figure 9.72 Longword Write Timing in 16-Bit Access Space (BE = 1, RCDM = 0)
Precharge-sel
Address bus
D15 to D8
SDRAMφ
D7 to D0
DQMLU
DQMLL
RD/WR
RAS
CAS
CKE
WE
CS
BS
PALL
T
Row address
p
ACTV
address
Row
T
r
Column address 1
NOP
High
T
c1
WRIT
T
c2
Column address 2
NOP
T
c1
WRIT
T
c2

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