R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1455

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
30.5
Table 30.11 USB Characteristics when On-Chip USB Transceiver is Used
Conditions: V
Note:
Input
Output
*
USB Characteristics
Input high voltage
Input low voltage
Differential input
sensitivity
Differential common
mode range
Output high voltage
Output low voltage
Crossover voltage
Rising time
Falling time
Ratio of rising time to
falling time
Output resistance
V
CC
(USD+, USD− pin characteristics)
CKU = 48 MHz, T
T
Item
a
= PLLV
CC
= –40°C to +85°C (wide-range specifications)
= PLLV
CC
= DrV
CC
= DrV
CC
a
= 2.95 V to 3.60 V in the H8SX/1665M Group.
= –20°C to +75°C (regular specifications),
Symbol Min.
V
V
V
V
V
V
V
t
t
t
Z
CC
R
F
RFM
DRV
IH
IL
DI
CM
OH
OL
CRS
= 3.0 V to 3.6 V*, V
2.0
0.2
0.8
2.8
1.3
4
4
90
28
Max.
0.8
2.5
0.3
2.0
20
20
111.11
44
SS
= PLLV
Rev. 2.00 Oct. 21, 2009 Page 1421 of 1454
V
V
V
V
V
V
V
%
Ω
Unit
ns
ns
Section 30 Electrical Characteristics
SS
Test Conditions
⏐(D+) − (D−)⏐
I
I
(T
Including
R
= DrV
OH
OL
S
R
= 2 mA
= −200 μA
/T
= 22Ω
F
)
SS
= AV
REJ09B0498-0200
SS
Figure 30.57
Figure 30.58
= 0 V,

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