R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1460

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 30 Electrical Characteristics
30.8
Table 30.16 Flash Memory Characteristics
Conditions: V
Operating temperature range during programming/erasing:
Operating temperature range: T
Operating voltage range: V
Rev. 2.00 Oct. 21, 2009 Page 1426 of 1454
REJ09B0498-0200
Item
Programming time*
Erasure time*
Programming time
(total)*
Erasure time (total)*
1,
*
2,
Flash Memory Characteristics
*
4
V
1,
CC
ref
*
2,
= 3.0 V to AV
= PLLV
*
4
1,
1,
*
*
2,
2,
*
*
4
4
CC
CC
= DrV
Symbol
t
t
Σ
Σ
P
E
= PLLV
tP
tE
T
a
CC
a
V
= 0°C to +75°C (regular specifications),
= 0°C to +85°C (wide-range specifications)
, V
ref
CC
= 3.0 V to AV
SS
= 3.0 V to 3.6 V*
CC
= PLLV
Min.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 3.0 V to 3.6 V, AV
SS
= DrV
Typ.
1
40
300
600
3.4
4.5
3.4
4.5
CC
, V
5
SS
, AV
SS
= PLLV
= AV
Max.
10
130
800
1500
9
12
9
12
CC
CC
= 3.0 V to 3.6 V,
SS
= 3.0 V to 3.6 V,
= 0 V,
SS
= DrV
Unit
ms/128 bytes
ms/4-Kbyte
block
ms/32-Kbyte
block
ms/64-Kbyte
block
H8SX/1662,
H8SX/1662M
s/384 Kbytes
H8SX/1665,
H8SX/1665M
s/512 Kbytes
H8SX/1662,
H8SX/1662M
s/384 Kbytes
H8SX/1665,
H8SX/1665M
s/512 Kbytes
SS
= AV
SS
= 0V
Test
Conditions
T
for all 0s
T
a
a
= 25°C,
= 25°C