R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 141

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Figure 5.4 Example of the Procedure for Setting the Voltage-Monitoring Interrupt
If the flag has been set to 1
before the voltage-monitoring
interrupt is enabled, clear it
by writing 0 after having read
it as 1.
Voltage monitoring interrupt
(IRQ14) disabled
Voltage detection and
IRQ register settings
Voltage-monitoring interrupt
(IRQ14) enabled
Note:
*
When the LVDF cannot be cleared despite Vcc being at a higher electrical potential than
Vdet (LVDMON = 1), the voltage-detection circuit is in the state of waiting for stabilization.
Clear the bit again after the stabilization time (t
Processing for lowered Vcc
(IRQ14SR = 0, IRQ14SF = 1)
Interrupt generation
when a low voltage is
detected
LVDCR.LVDRI = write 1
LVDCR.LVDE = write 1
PFCRB.ITS14 = write 1
IER.IRQ14E = write 0
IER.IRQ14E = write 1
Clear RSTSR.LVDF*
ISR.IRQ14F = clear
LVDMON = 1
Start program
ISCR setting
Yes
LVDCR.
(Vcc high)
POR
No
) has elapsed.
Rev. 2.00 Oct. 21, 2009 Page 107 of 1454
Section 5 Voltage Detection Circuit (LVD)
(Vcc low)
Processing
for lowered Vcc
REJ09B0498-0200

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