R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 372

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 9 Bus Controller (BSC)
(4)
When the SDRAM space is read, the read data settling cycle can be inserted for one cycle using
the clock suspend mode. To enter the clock suspend mode, set the OEE bit in DRAMCR to 1, and
connect the CKE pin.
Figure 9.88 shows an output timing example of the DACK and EDACK signals when CKSPE = 1
with DDS = 1, EDDS = 1, DKC = 0 and EDKC = 0.
Rev. 2.00 Oct. 21, 2009 Page 338 of 1454
REJ09B0498-0200
When CKSPE = 1
Figure 9.88 Output Timing Example of DACK and EDACK when CKSPE = 1
DACK or EDACK
Precharge-sel
Address bus
D15 to D8
SDRAMφ
D7 to D0
DQMLU
DQMLL
RD/WR
RAS
CAS
CKE
WE
CS
BS
Row address
PALL ACTV READ
T
p
address
(Read, CAS Latency = 2)
Row
T
r
T
c1
Column address 1
T
cl
T
NOP
sp
T
c2
READ
T
c1
Column address 2
T
cl
NOP
T
sp
T
c2

Related parts for R5F61665N50FPV