R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1162

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Flash Memory
Rev. 2.00 Oct. 21, 2009 Page 1128 of 1454
REJ09B0498-0200
Bit
4
3 to 1
Bit Name
FLER
⎯
Initial
Value
0
All 0
R/W
R
R
Description
Flash Memory Error
Indicates that an error has occurred during programming
or erasing the flash memory. When this bit is set to 1,
the flash memory enters the error protection state.
When this bit is set to 1, high voltage is applied to the
internal flash memory. To reduce the damage to the
flash memory, the reset must be released after the reset
input period (period of RES = 0) of at least 100 μs.
0: Flash memory operates normally (Error protection is
[Clearing condition]
•
1: An error occurs during programming/erasing flash
[Setting conditions]
•
•
•
•
Reserved
These are read-only bits and cannot be modified.
invalid)
memory (Error protection is valid)
At a reset
When an interrupt, such as NMI, occurs during
programming/erasure.
When the flash memory is read during
programming/erasure (including a vector read and
an instruction fetch).
When the SLEEP instruction is executed during
programming/erasure (including software standby
mode).
When a bus master other than the CPU, such as the
DMAC and DTC, obtains bus mastership during
programming/erasure.