R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1198

MCU FLASH 512K ROM 144-LQFP

R5F61665N50FPV

Manufacturer Part Number
R5F61665N50FPV
Description
MCU FLASH 512K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61665N50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61665N50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 25 Flash Memory
The procedure program must be executed in an area other than the user MAT to be erased. Setting
the SCO bit in FCCS to 1 to request download must be executed in the on-chip RAM. The area
that can be executed in the steps of the procedure program (on-chip RAM, user MAT, and external
space) is shown in section 25.8.5, On-Chip Program and Storable Area for Program Data. For the
downloaded on-chip program area, see figure 25.12.
One erasure processing erases one block. For details on block divisions, refer to figure 25.4. To
erase two or more blocks, update the erase block number and repeat the erasing processing for
each block.
1. Select the on-chip program to be downloaded and the download destination. When the EPVB
2. Set the FEBS parameter necessary for erasure. Set the erase block number (FEBS parameter)
3. Erasure is executed. Similar to as in programming, the entry point of the erasing program is at
4. The return value in the erasing program, the FPFR parameter is determined.
5. Determine whether erasure of the necessary blocks has finished. If more than one block is to
6. After erasure completes, clear FKEY and specify software protection. If this LSI is restarted by
Rev. 2.00 Oct. 21, 2009 Page 1164 of 1454
REJ09B0498-0200
bit in FECS is set to 1, the programming program is selected. Several programming/erasing
programs cannot be selected at one time. If several programs are selected, a download error is
returned to the SS bit in the DPFR parameter. The on-chip RAM start address of the download
destination is specified by FTDAR.
For the procedures to be carried out after setting FKEY, see section 25.8.3 (2), Programming
Procedure in User Program Mode.
of the user MAT in general register ER0. If a value other than an erase block number of the
user MAT is set, no block is erased even though the erasing program is executed, and an error
is returned to the FPFR parameter.
the address which is 16 bytes after #DLTOP (start address of the download destination
specified by FTDAR). Call the subroutine to execute erasure by using the following steps.
MOV.L #DLTOP+16, ER2
JSR
NOP
be erased, update the FEBS parameter and repeat steps 2 to 5.
a reset immediately after erasure has finished, secure the reset input period (period of RES = 0)
of at least 100 μs.
The general registers other than ER0 and ER1 are held in the erasing program.
R0L is a return value of the FPFR parameter.
Since the stack area is used in the erasing program, a stack area of 128 bytes at the
maximum must be allocated in RAM.
@ER2
; Set entry address to ER2
; Call erasing routine

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