R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 1157

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(2)
The on-chip program is automatically downloaded by setting the flash key code register (FKEY)
and the SCO bit in the flash code control/status register (FCCS) after initializing the vector base
register (VBR). The memory MAT is replaced with the embedded program storage area during
download. Since the memory MAT cannot be read during programming/erasing, the procedure
program must be executed in a space other than the flash memory (for example, on-chip RAM).
Since the download result is returned to the programming/erasing interface parameter, whether
download is normally executed or not can be confirmed. The VBR contents can be changed after
completion of download.
(3)
A pulse with the specified period must be applied when programming or erasing. The specified
pulse width is made by the method in which wait loop is configured by the CPU instruction.
Accordingly, the operating frequency of the CPU needs to be set before programming/erasure. The
operating frequency of the CPU is set by the programming/erasing interface parameter.
(4)
The start address of the programming destination and the program data are specified in 128-byte
units when programming. The block to be erased is specified with the erase block number in
erase-block units when erasing. Specifications of the start address of the programming destination,
program data, and erase block number are performed by the programming/erasing interface
parameters, and the on-chip program is initiated. The on-chip program is executed by using the
JSR or BSR instruction and executing the subroutine call of the specified address in the on-chip
RAM. The execution result is returned to the programming/erasing interface parameter.
The area to be programmed must be erased in advance when programming flash memory. All
interrupts are disabled during programming/erasure.
(5)
When processing does not end by 128-byte programming or 1-block erasure, consecutive
programming/erasure can be realized by updating the start address of the programming destination
and program data, or the erase block number. Since the downloaded on-chip program is left in the
on-chip RAM even after programming/erasure completes, download and initialization are not
required when the same processing is executed consecutively.
Download of On-Chip Program
Initialization of Programming/Erasure
Execution of Programming/Erasure
When Programming/Erasure is Executed Consecutively
Rev. 2.00 Oct. 21, 2009 Page 1123 of 1454
Section 25 Flash Memory
REJ09B0498-0200