R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 341

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

9.11.6
The CAS latency is controlled by bits W21 and W20 in WTCRB. Table 9.27 lists the setting and
CAS latency. CAS latency control cycles (Tcl) are inserted in a read cycle according to the W21
and W20 settings. WTCRB can be specified regardless of bit AST2 in ASTCR.
Figure 9.62 shows a timing example when SDRAM with a CAS latency of 3 is in use.
Bits W21 and W20 is initialized to B'11.
Table 9.27 CAS Latency Setting
W21
0
1
CAS Latency Control
0
1
0
1
W20
Description
Setting prohibited
SDRAM with CAS latency of 2 is in use
SDRAM with CAS latency of 3 is in use
SDRAM with CAS latency of 4 is in use
Rev. 2.00 Oct. 21, 2009 Page 307 of 1454
Section 9 Bus Controller (BSC)
Number of CAS
Latency Cycles
⎯
1
2
3
REJ09B0498-0200