R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 332

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 9 Bus Controller (BSC)
Some DRAMs having the self-refresh mode needs longer precharge time of the RAS signal
immediately after the self-refresh mode than that in normal operation. From one to seven of
precharge cycles immediately after a self-refresh cycle can be inserted. Precharging is also
performed according to bits TPC1 and TPC0 in DRACCR. Set the precharge time so that the
precharge time immediately after a self-refresh cycle is optimal.
Figure 9.57 shows a timing example when one precharge cycle is added.
Rev. 2.00 Oct. 21, 2009 Page 298 of 1454
REJ09B0498-0200
Address bus
Data bus
RD/WR
LUCAS
LLCAS
RAS
Figure 9.57 Timing Example when 1 Precharge Cycle Added
WE
RD
OE
BS
Bφ
Software standby
T R
c3
T R
c4
T R
p1
High
High
High
T
p
DRAM space write
T
r
T
c1
T
c2