R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 362

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 9 Bus Controller (BSC)
Some DRAMs with the self-refresh have a given time between cancellation of the self-refresh
mode and the subsequent command issued cycle. From one to seven of precharge cycles
immediately after cancellation of the self-refresh mode can be inserted. Normal precharge is also
performed according to bits TPC1 and TPC0 in DRACCR. Set the precharge time including the
normal precharge so that the precharge time immediately after a self-refresh cycle is optimal.
Figure 9.80 shows a timing example when one precharge cycle is added.
Rev. 2.00 Oct. 21, 2009 Page 328 of 1454
REJ09B0498-0200
DQMLU, DQMLL
Precharge-sel
Software Standby Mode (TPCS2 to TPCS0 = H'1, TPC1 = 0, TPC0 = 0)
Address bus
Figure 9.80 Timing Example when 1 Precharge Cycle Added in the
SDRAMφ
Data bus
RD/WR
RAS
CAS
CKE
WE
CS
BS
Software
standby
TR
NOP
c2
TR
c3
TR
p1
PALL
Row address
T
p
SDRAM space write
ACTV
address
Row
T
r
Column address
NOP
T
c1
WRITE
T
c2