R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 361

• Manufacturer Part Number: R5F61665N50FPV
• Description: MCU FLASH 512K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61665N50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(2)
Some SDRAMs have a self-refresh mode (battery backup mode). The self-refresh is a kind of
standby mode and refresh timing and refresh address are controlled internally.
(a) Self-Refresh in Software Standby Mode
The self-refresh is selected by setting the RFSHE and SLFRF bits in REFCR to 1. The SELF-
command is issued as shown in figure 9.79 by executing the SLEEP instruction to enter the
software standby mode.
When an auto-refresh is requested on a transition to the software standby mode, the auto-refresh is
first performed and then the self-refresh is entered.
When making a transition to the self-refresh, set the OEE bit in SBYCR to 1 and connect the CKE
pin.
When the self-refresh is used, do not clear the OPE bit in SBYCR to 0.
Self-Refresh Mode
Precharge-sel
(TPC1 = 0, TPC0 = 0, RCW1 = 0, RCW0 = 0, RLW2 = 0, RLW1 = 0, RLW0 = 0)
Address bus
SDRAMφ
RD/WR
RAS
CAS
CKE
WE
CS
BS
Figure 9.79 Self-Refresh Timing in software standby mode
PALL
TR
p
SELF
TR
r
High
High
Software standby
Rev. 2.00 Oct. 21, 2009 Page 327 of 1454
NOP
Section 9 Bus Controller (BSC)
TR
c2
REJ09B0498-0200
TR
c3