R5F61665N50FPV Renesas Electronics America, R5F61665N50FPV Datasheet - Page 310

Manufacturer Part Number

R5F61665N50FPV

MCU FLASH 512K ROM 144-LQFP

Manufacturer

Renesas Electronics America

H8® H8SX/1600r

Core Processor

Connectivity

EBI/EMI, I²C, IrDA, SCI, SmartCard, USB

DMA, LVD, POR, PWM, WDT

Number Of I /o

Program Memory Size

512KB (512K x 8)

Program Memory Type

Voltage - Supply (vcc/vdd)

Data Converters

A/D 8x10b; D/A 2x8b

Oscillator Type

Operating Temperature

-20°C ~ 75°C

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Manufacturer

BOSTOCK HK LIMITED

Part Number:

R5F61665N50FPV

Manufacturer:

Renesas Electronics America

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Section 9 Bus Controller (BSC)

In this LSI, area 2 in the external space can be used as the DRAM interface space. Up to 8 Mbytes

of DRAM is directly connected via the DRAM interface.

Area 2 can be specified as the DRAM space by the DRAME and DTYPE bits in DRAMCR.

Table 9.20 lists the relationship among the DRAME and DTYPE bits and area 2 interfaces.

The bus settings of the DRAM space such as bus width and wait cycle number depend on area 2

Table 9.20 Relationship Among DRAME and DTYPE and Area 2 Interfaces

×: Don't care

A Row address and a column address are multiplexed in the DRAM space. Select the number of

row address bits to be shifted with bits MXC1 and MXC0 in DRAMCR. Table 9.21 lists the

relationship among bits MXC1 and MXC0 and shifted bit number.

Table 9.21 Relationship Among MXC1 and MXC0 and Shifted Bit Count

Rev. 2.00 Oct. 21, 2009 Page 276 of 1454

REJ09B0498-0200

DRAM Interface

Setting DRAM Space

Address Multiplexing

Column address

Column address

Column address

Column address

Area 2 Interface

Basic bus space (initial state)/byte-control SRAM space