HH80556KH0364M S LAGD Intel, HH80556KH0364M S LAGD Datasheet - Page 385

• Manufacturer Part Number: HH80556KH0364M S LAGD
• Manufacturer: Intel

Specifications of HH80556KH0364M S LAGD

• Rad Hardened: No
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics—Intel
Table 135.
The MCH incorporates an on-die diode that may be used to monitor the die temperature (junction
temperature). A thermal sensor located on the motherboard or a stand-alone measurement kit may
monitor the die temperature of the MCH for thermal management or characterization (see
for Thermal Diode signals).
Table 136.
July 2009
Order Number: 318378-005US
I
n_ideality
ESR
Notes:
1.
2.
3.
4.
fb
Symbol
Intel does not support or recommend operation of the thermal diode under reverse bias.
At room temperature with a forward bias of 630 mV
ESR is needed for various thermal diode measurement tools.
The diode ideality factor is represented by the diode equation below, where
i = Collector current (I
Is = saturation current
v = voltage across transistor
q = charge of an electron, 1.6021892x10
n = Diode Ideality factor (n_ideality)
k = Boltzmann Constant, 1.380662x10
T = temperature in degrees Kelvin (K).
Thermal Diode Parameters
Thermal Diode Interface
TDIOANODE
TDIOCATHODE
Current Forward Bias
Diode Ideality factor
Effective Series Resistance
Signal
fb
)
®
Parameter
5100 MCH Chipset
-23
i
-19
J/K x molecule
=
I
s
⎛
⎜
⎝
e
- - - - - - -
nkT
Diode Cathode (n_junction)
vq
Diode Anode (p_junction)
1.0027
Min.
2.3
Signal Description
1
–
1
⎞
⎟
⎠
1.0032
Nom.
2.7
---
Intel
®
5100 Memory Controller Hub Chipset
1.0036
Max.
300
2.9
Unit
Table 136
µA
Ω
Datasheet
Notes
2,
1
3
4
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