MCF51EM256CLL Freescale Semiconductor, MCF51EM256CLL Datasheet - Page 98

• Manufacturer Part Number: MCF51EM256CLL
• Description: IC MCU 32BIT 256KB FLASH 100LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF51EMr

Specifications of MCF51EM256CLL

• Core Processor: Coldfire V1
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LCD, LVD, PWM, WDT
• Number Of I /o: 63
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Processor Series: MCF51EM
• Core: ColdFire V1
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: RS-232, LIN
• Maximum Clock Frequency: 50 MHz
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: DEMOEM
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Memory
3.4.5.3
The burst program operation will program previously erased data in the flash memory using an embedded
algorithm.
While burst programming, two internal data registers operate as a buffer and a register (2-stage FIFO) so
that a second burst programming command along with the necessary data can be stored to the buffers while
the first burst programming command is still in progress. This pipelined operation allows a time
optimization when programming more than one consecutive address on a specific row in the flash array as
the high voltage generation can be kept active in between two programming commands.
An example flow to execute the burst program operation is shown in
command write sequence is as follows:
The burst program procedure can be used to program the entire flash memory even while crossing row
boundaries within the flash array. If data to be burst programmed falls within a protected area of the flash
array, the FPVIOL flag in the FxSTAT register will set and the burst program command will not launch.
Once the burst program command has successfully launched, the FCCF flag in the FxSTAT register will
set after the burst program operation has completed unless a new burst program command write sequence
has been buffered. By executing a new burst program command write sequence on sequential addresses
after the FCBEF flag in the FxSTAT register has been set, greater than 50% faster programming time for
the entire flash array can be effectively achieved when compared to using the basic program command.
3-42
1. Write to an aligned flash block address to start the command write sequence for the burst program
2. Write the program burst command, 0x25, to the FxCMD register.
3. Clear the FCBEF flag in the FxSTAT register by writing a 1 to FCBEF to launch the program burst
4. After the FCBEF flag in the FxSTAT register returns to a 1, repeat steps 1 through 3. The address
command. The data written will be programmed to the address written.
command.
written is ignored but is incremented internally.
Burst Program Command
MCF51EM256 Series ColdFire Integrated Microcontroller Reference Manual, Rev. 8
Figure
3-12. The burst program
Freescale Semiconductor