R0K572030S000BE Renesas Electronics America, R0K572030S000BE Datasheet - Page 1125

• Manufacturer Part Number: R0K572030S000BE
• Description: KIT DEV FOR SH7203
• Manufacturer: Renesas Electronics America
• Series: Renesas Starter Kits (RSK)r
• Type: MCUr

Specifications of R0K572030S000BE

• Contents: CPU Board, LCD Module, E10A-Lite Emulator, Cable, QuickStart Guide and CD-ROM
• Silicon Manufacturer: Renesas
• Kit Contents: Board
• Silicon Family Name: SH7203
• Silicon Core Number: R5S72030W200FP
• Tool / Board Applications: General Purpose MCU, MPU, DSP, DSC
• Mcu Supported Families: SH7203
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With/related Products: SH7203
• Lead Free Status / Rohs Status: Compliant

22.4.7
The FLCTL can read the status register of an AND-type or NAND-type flash memory. The data in
the status register of an AND-type or NAND-type flash memory is input through the I/O7 to I/O0
pins and stored in the bits STAT[7:0] in FLBSYCNT. The bits STAT[7:0] in FLBSYCNT can be
read by the CPU. If a program error or erase error is detected when the status register value is
stored in the bits STAT[7:0] in FLBSYCNT, the STERB bit in FLINTDMACR is set to 1 and
generates an interrupt to the CPU if the STERINTE bit in FLINTDMACR is enabled.
(1)
The status register of AND-type flash memory can be read by asserting the output enable signal
OE (OE = 0). If programming is executed in command access mode or sector access mode while
the DOSR bit in FLCMDCR is set to 1, the FLCTL automatically asserts the OE signal and reads
the status register of AND-type flash memory. When the status register of AND-type flash
memory is read, the I/O7 to I/O0 pins indicate the following information as described in table
22.3.
Table 22.3 Status Read of AND-Type Flash Memory
I/O
I/O7
I/O6
I/O5
I/O4
I/O3 to I/O0
Status Read of AND-Type Flash Memory
Status Read
Status (definition)
Reserved
Program check
Reserved
Ready/busy
Erase check
Description
0: Busy state
1: Ready state
⎯
0: Pass (erased)
1: Fail (erase failure)
0: Pass (programmed)
1: Fail (program failure)
⎯
Section 22 AND/NAND Flash Memory Controller (FLCTL)
Rev. 3.00 Sep. 28, 2009 Page 1093 of 1650
REJ09B0313-0300