HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 9

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Item
All
7.12.2 Register
Descriptions
Table 7.23 Port B
Pin Functions
(Modes 1 to 5)
Table 7.24 Port B
Pin Functions
(Modes 6 and 7)
18.5.1 Boot Mode 548
21.2.6 Flash
Memory
Characteristics
Table 21.19 Flash
Memory
Characteristics
Page
203, 204 Description amended
205, 206 PB
629, 630 Table amended and note added
Main Revisions for This Edition
Revision (See Manual for Details)
All references to Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and
other Hitachi brand names changed to Renesas Technology Corp.
Designation for categories changed from “series” to “group”
PB
Bits OIS3/2 and OS1/0 in 8TCSR3,
NDER11 in NDERB, and bit PB
follows.
PB
Bits OIS3/2 and OS1/0 in 8TCSR1,
NDER9 in NDERB, and bit PB
follows.
Bits OIS3/2 and OS1/0 in 8TCSR3,
and bit PB
PB
Bits OIS3/2 and OS1/0 in 8TCSR1,
and bit PB
Description amended
After the transfer is completed,
address (H'FFF520) of the programming control program area and
the programming control program execution state is entered (flash
memory programming/erasing can be performed).
Notes: 6. Minimum number of times at which all characteristics are
Item
Programming time*
Erase time*
Reprogramming count
Data retention period
3
1
3
1
/TP
/TP
/TP
/TP
1
11
9
11
9
*
7. Reference characteristics at 25 C. (This is an indication
8. Data retention characteristics when reprogramming is
/TMIO
/TMIO
3
/TMIO
/TMIO
*
5
3
1
guaranteed after reprogramming. (Reprogramming count
from 1 to minimum value is guaranteed.)
that reprogramming operations can normally be
performed up to this figure.)
performed correctly within the specification values,
including the minimum data retention period.
DDR select the pin function as follows.
DDR select the pin function as follows.
1
*
2
*
1
1
4
3
/
3
C S
/
C S
6
4
Rev. 2.00 Sep 20, 2005 page vii of xxxviii
Symbol Min
t
t
N
t
1
P
E
DRP
DDR select the pin function as
WEC
3
DDR select the pin function as
—
—
100*
10*
8
control branches to the start
6
Typ
10
100
10,000*
—
bit CS4E in CSCR, bit
bit CS6E in CSCR, bit
bit NDER11 in NDERB,
bit NDER9 in NDERB,
7
Max
200
—
—
1200
Unit
ms/
128 bytes
ms/block
Times
Years
Notes