HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 540

MCU 3V 256K 100-TQFP

HD64F3026X25

Manufacturer Part Number
HD64F3026X25
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3026X25

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
70
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3026X25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 Flash Memory [H8/3026F-ZTAT Version]
Rev. 2.00 Sep 20, 2005 page 500 of 800
REJ09B0260-0200
Notes: 1. Do not apply a constant high level to the FWE pin. A high level should be applied to the
2. For further information on FWE application and disconnection, see section 17.11, Flash
3. In order to execute a normal read of flash memory in user program mode, the
FWE pin only when programming or erasing flash memory (including execution of flash
memory emulation by RAM). Also, while a high level is applied to the FWE pin, the
watchdog timer should be activated to prevent overprogramming or overerasing due to
program runaway, etc.
Memory Programming and Erasing Precautions.
programming/erase program must not be executing. It is thus necessary to ensure that
bits 6 to 0 in FLMCR1 are cleared to 0.
Figure 17.8 Example of User Program Mode Execution Procedure
Write FWE assessment program and transfer
program (and programming/erase control
program if necessary) beforehand
Branch to programming/erase control
Transfer programming/erase control
Execute programming/erase control
Clear SWE bit, then release FWE
Branch to application program
(user program mode clearing)
(flash memory rewriting)
MD
program in RAM area
(user program mode)
2
program to RAM
program in RAM
in flash memory
–MD
FWE = high
Reset-start
0
= 101 or 111

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