HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 669

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

21.2.6
Table 21.19 shows the flash memory characteristics.
Table 21.19 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Data retention period
Programming Wait time after SWE bit setting *
Erase
Flash Memory Characteristics
1
*
3
T
*
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
5
a
CC
= 0°C to +75°C (operating temperature range for programming/erasing)
1
= 3.0 to 3.6 V, AV
*
2
*
4
1
*
5
CC
1
1
1
1
1
1
= 3.0 to 3.6 V, V
*
1
*
1
1
1
1
1
4
5
1
1
1
1
1
*
4
1
1
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
t
N
t
t
t
t
t
t
t
t
t
N
P
E
DRP
sswe
spsu
sp30
sp200
sp10
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
WEC
Min
—
—
100*
10*
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
12
SS
Rev. 2.00 Sep 20, 2005 page 629 of 800
= AV
8
6
Section 21 Electrical Characteristics
Typ
10
100
10,000*
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
SS
= 0 V,
7
Max
200
1200
—
—
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
Unit
ms/
128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
REJ09B0260-0200
Notes
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time
wait