HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 613

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

18.11
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 18.16 to 18.18)
3. FWE application/disconnection
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Technology microcomputer device type with 128-kbyte
on-chip flash memory.
Do not apply a high level to the FWE pin until V
low before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery. Failure to do so may result in overprogramming or
overerasing due to MCU runaway, and loss of normal memory cell operation.
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to
prevent unintentional programming or erasing of flash memory:
• Apply FWE when the V
• Apply FWE when oscillation has stabilized (after the elapse of the oscillation settling
• In boot mode, apply and disconnect FWE during a reset.
If FWE is applied when the MCU’s V
MCU operation will be unstable and flash memory may be erroneously programmed or
erased.
time).
When V
settling time before applying FWE. Do not apply FWE when oscillation has stopped or is
unstable.
In a transition to boot mode, FWE = 1 input and MD
while the
programming setup time (t
transition from boot mode to another mode, also, a mode programming setup time is
necessary with respect to the reset release timing.
Flash Memory Programming and Erasing Precautions
CC
R E S
power is turned on, hold the
input is low. FWE and MD
CC
.
CC
MDS
voltage has stabilized within its rated voltage range.
) with respect to the reset release timing. When making a
CC
power, fix the FWE pin low and place the flash memory
CC
Section 18 Flash Memory [H8/3024F-ZTAT Version]
R E S
power supply is not within its rated voltage range,
2
–MD
pin low for the duration of the oscillation
CC
has stabilized. Also, drive the FWE pin
0
pin input must satisfy the mode
Rev. 2.00 Sep 20, 2005 page 573 of 800
2
–MD
0
setting should be performed
REJ09B0260-0200