HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 576

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 18 Flash Memory [H8/3024F-ZTAT Version]
Bit 1—Erase Mode (E): Selects erase mode transition or clearing. (Do not set the SWE, ESU,
PSU, EV, PV, or P bit at the same time.)
Bit 1
E
0
1
Note: Do not access the flash memory while the E bit is set.
Bit 0—Program (P): Selects program mode transition or clearing. (Do not set the SWE, ESU,
PSU, EV, PV, or E bit at the same time.)
Bit 0
P
0
1
Note: Do not access the flash memory while the P bit is set.
18.3.2
FLMCR2 is an 8-bit register used for flash memory operating mode control. FLMCR2 is
initialized to H'00 by a reset, and in hardware standby mode and software standby mode. When
the on-chip flash memory is disabled, a read will return H'00.
Note: FLMCR2 is a read-only register, and should not be written to.
Rev. 2.00 Sep 20, 2005 page 536 of 800
REJ09B0260-0200
Bit
Initial value
Read/Write
Flash Memory Control Register 2 (FLMCR2)
Description
Erase mode cleared
Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
Description
Program mode cleared
Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
FLER
R
7
0
—
R
6
0
—
R
5
0
—
R
4
0
—
R
3
0
—
R
2
0
—
R
1
0
(Initial value)
(Initial value)
—
R
0
0