HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 560

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 Flash Memory [H8/3026F-ZTAT Version]
17.10.2 Notes on Use of PROM Mode
1. A write to a 128-byte programming unit in PROM mode should be performed once only.
2. When using a PROM writer to reprogram a device on which on-board programming/erasing
3. The memory is initially in the erased state when the device is shipped by Renesas Technology.
4. The H8/3026F-ZTAT version does not support a product identification mode as used with
5. Refer to the instruction manual provided with the socket adapter, or other relevant
17.11
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
1. Use the specified voltages and timing for programming and erasing.
2. Powering on and off (see figures 17.16 to 17.18)
Rev. 2.00 Sep 20, 2005 page 520 of 800
REJ09B0260-0200
Erasing must be carried out before reprogramming an address that has already been
programmed.
has been performed, it is recommended that erasing be carried out before executing
programming.
For samples for which the erasure history is unknown, it is recommended that erasing be
executed to check and correct the initialization (erase) level.
general-purpose EPROMs, and therefore the device name cannot be set automatically in the
PROM writer.
documentation, for information on PROM writers and associated program versions that are
compatible with the PROM mode of the H8/3026F-ZTAT version.
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Renesas Technology microcomputer device type with 256-kbyte
on-chip flash memory.
Do not apply a high level to the FWE pin until V
low before turning off V
When applying or disconnecting V
in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a
power failure and subsequent recovery. Failure to do so may result in overprogramming or
overerasing due to MCU runaway, and loss of normal memory cell operation.
Flash Memory Programming and Erasing Precautions
CC
.
CC
power, fix the FWE pin low and place the flash memory
CC
has stabilized. Also, drive the FWE pin