HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 554

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 Flash Memory [H8/3026F-ZTAT Version]
The error protection function is invalid for abnormal operations other than the FLER bit setting
conditions. Also, if a certain time has elapsed before this protection state is entered, damage may
already have been caused to the flash memory. Consequently, this function cannot provide
complete protection against damage to flash memory.
To prevent such abnormal operations, therefore, it is necessary to ensure correct operation in
accordance with the program/erase algorithm, with the flash write enable (FWE) voltage applied,
and to conduct constant monitoring for MCU errors, internally and externally, using the watchdog
timer or other means. There may also be cases where the flash memory is in an erroneous
programming or erroneous erasing state at the point of transition to this protection mode, or where
programming or erasing is not properly carried out because of an abort. In cases such as these, a
forced recovery (program rewrite) must be executed using boot mode. However, it may also
happen that boot mode cannot be normally initiated because of overprogramming or overerasing.
Rev. 2.00 Sep 20, 2005 page 514 of 800
REJ09B0260-0200
RD: Memory read possible
VF:
PR: Programming possible
ER: Erasing possible
(When High Level is Applied to FWE Pin in Mode 5 or 7 (On-Chip ROM Enabled))
RD VF PR ER FLER = 0
Verify-read possible
Program mode
Erase mode
RD VF PR ER FLER = 1
Error
occurrence
Error protection mode
Figure 17.12 Flash Memory State Transitions
Error occurrence
(software standby)
RD: Memory read not possible
VF:
PR: Programming not possible
ER: Erasing not possible
INIT: Register initialization state
RES = 0 or STBY = 0
Software
standby mode
Software standby
mode release
Verify-read not possible
RES = 0 or
STBY = 0
RD VF PR ER INIT FLER = 1
RES = 0 or
STBY = 0
Error protection mode
FLMCR1, EBR1, EBR2
initialization state
RD VF PR ER INIT FLER = 0
(software standby)
(hardware protection)
Reset or standby
FLMCR1, FLMCR2,
EBR1, EBR2
initialization state