HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 563

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

10. Do not touch the socket adapter or chip during programming.
11. A wait time of 100 µs or more is necessary when performing a read after a transition to
12. Use byte access on the registers that control the flash memory (FLMCR1, FLMCR2,
V
FWE
MD
RES
SWE bit
Notes: 1. Except when switching modes, the level of the mode pins (MD
CC
Touching either of these can cause contact faults and write errors.
normal mode from program, erase, or verify mode.
EBR1, EBR2, and RAMCR).
2
to MD
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit, y: Wait time after clearing SWE bit) *
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
2. See section 21.2.6, Flash Memory Characteristics.
0
*
by pulling the pins up or down.
1
Figure 17.16 Power-On/Off Timing (Boot Mode)
t
OSC1
t
SWE set
MDS
t
MDS
Wait time:
Section 17 Flash Memory [H8/3026F-ZTAT Version]
x
Program-
ming/
erasing
possible
Rev. 2.00 Sep 20, 2005 page 523 of 800
Wait time:
y
Min 0 s
2
–MD
SWE cleared
2
0
) must be fixed until power-off
Min 0 s
REJ09B0260-0200