HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 573

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

18.3
18.3.1
Note: * Determined by the state of the FWE pin.
FLMCR1 is an 8-bit register used for flash memory operating mode control.
Program-verify mode or erase-verify mode for addresses H'00000 to H'1FFFF is entered by setting
the SWE bit when FWE = 1, then setting the PV or EV bit. Program mode for addresses H'00000
to H'1FFFF is entered by setting the SWE bit when FWE = 1, then setting the PSU bit, and finally
setting the P bit. Erase mode for addresses H'00000 to H'1FFFF is entered by setting the SWE bit
when FWE = 1, then setting the ESU bit, and finally setting the E bit. FLMCR1 is initialized by a
reset, and in hardware standby mode and software standby mode. Its initial value is H'80 when a
high level is input to the FWE pin, and H'00 when a low level is input. In mode 6 the FWE pin
must be fixed low since flash memory on-board programming modes are not supported. When the
on-chip flash memory is disabled, a read access to this register will return H'00, and writes are
invalid.
When setting bits 6 to 0 in this register, one bit must be set one at a time. Writes to the SWE bit in
FLMCR1 are enabled only when FWE = 1; writes to bits ESU, PSU, EV, and PV only when FWE
= 1 and SWE = 1; writes to the E bit only when FWE = 1, SWE = 1, and ESU = 1; and writes to
the P bit only when FWE = 1, SWE = 1, and PSU = 1.
Notes: 1. The programming and erase flowcharts must be followed when setting the bits in this
Bit
Initial value
Read/Write
2. Transitions are made to program mode, erase mode, program-verify mode, and erase-
Register Descriptions
Flash Memory Control Register 1 (FLMCR1)
register to prevent erroneous programming or erasing.
verify mode according to the settings in this register. When reading flash memory as
normal on-chip ROM, bits 6 to 0 in this register must be cleared.
FWE
— *
R
7
SWE
R/W
6
0
ESU
R/W
5
0
Section 18 Flash Memory [H8/3024F-ZTAT Version]
PSU
R/W
4
0
Rev. 2.00 Sep 20, 2005 page 533 of 800
R/W
EV
3
0
R/W
PV
2
0
REJ09B0260-0200
R/W
E
1
0
R/W
P
0
0