HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 562

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 Flash Memory [H8/3026F-ZTAT Version]
4. Do not apply a constant high level to the FWE pin.
5. Use the recommended algorithm when programming and erasing flash memory.
6. Do not set or clear the SWE bit during execution of a program in flash memory.
7. Do not use interrupts while flash memory is being programmed or erased.
8. Do not perform additional programming. Erase the memory before reprogramming.
9. Before programming, check that the chip is correctly mounted in the PROM writer.
Rev. 2.00 Sep 20, 2005 page 522 of 800
REJ09B0260-0200
T prevent erroneous programming or erasing due to program runaway, etc., apply a high level
to the FWE pin only when programming or erasing flash memory (including execution of flash
memory emulation using RAM). A system configuration in which a high level is constantly
applied to the FWE pin should be avoided. Also, while a high level is applied to the FWE pin,
the watchdog timer should be activated to prevent overprogramming or overerasing due to
program runaway, etc.
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
P or E bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
Also note that access to the flash memory space by means of a MOV instruction, etc., is not
permitted while the P bit or E bit is set.
Clear the SWE bit before executing a program or reading data in flash memory. When the
SWE bit is set, data in flash memory can be rewritten, but flash memory should only be
accessed for verify operations (verification during programming/erasing).
Similarly, when using the RAM emulation function while a high level is being input to the
FWE pin, the SWE bit must be cleared before executing a program or reading data in flash
memory. However, the RAM area overlapping flash memory space can be read and written to
regardless of whether the SWE bit is set or cleared.
A wait time is necessary after the SWE bit is cleared. For details see table 21.19 in section
21.2.6, Flash Memory Characteristics.
All interrupt requests, including NMI, should be disabled during FWE application to give
priority to program/erase operations (including emulation in RAM).
Bus release must also be disabled.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Overcurrent damage to the device can result if the index marks on the PROM writer socket,
socket adapter, and chip are not correctly aligned.