HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 544

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 Flash Memory [H8/3026F-ZTAT Version]
before performing this read operation. Next, the originally written data is compared with the verify
data, and reprogram data is computed (see figure 17.10) and transferred to RAM. After
verification of 128 bytes of data has been completed, exit program-verify mode, wait for at least
(t
again, and repeat the program/program-verify sequence as before. The maximum number of
repetitions of the program/program-verify sequence is indicated by the maximum programming
count (N). Leave a wait time of at least (t
Notes on Program/Program-Verify Procedure
1. The program/program-verify procedure for the H8/3026F-ZTAT version uses a 128-byte-unit
2. When performing continuous writing of 128-byte data to flash memory, byte-unit transfer
3. Verify data is read in word units.
4. The write pulse is applied and a flash memory write executed while the P bit in FLMCR1 is
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REJ09B0260-0200
cpv
programming algorithm.
In order to perform 128-byte-unit programming, the lower 8 bits of the write start address must
be H'00 or H'80.
should be used.
128-byte data transfer is necessary even when writing fewer than 128 bytes of data. Write
H'FF data to the extra addresses.
set. In the H8/3026F-ZTAT version, write pulses should be applied as follows in the
program/program-verify procedure to prevent voltage stress on the device and loss of write
data reliability.
a. After write pulse application, perform a verify-read in program-verify mode and apply a
b. After write pulse application, a verify-read is performed in program-verify mode, and
) µs, then clear the SWE bit in FLMCR1. If reprogramming is necessary, set program mode
write pulse again for any bits read as 1 (reprogramming processing). When all the 0-write
bits in the 128-byte write data are read as 0 in the verify-read operation, the
program/program-verify procedure is completed. In the H8/3026F-ZTAT version, the
number of loops in reprogramming processing is guaranteed not to exceed the maximum
value of the maximum programming count (N).
programming is judged to have been completed for bits read as 0. The following processing
is necessary for programmed bits.
cswe
) µs after clearing SWE.