HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 670

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
Rev. 2.00 Sep 20, 2005 page 630 of 800
REJ09B0260-0200
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (Shows the total period for which the E-bit in FLMCR is set. It does not
4. To specify the maximum programming time (t
5. For the maximum erase time (t
6. Minimum number of times at which all characteristics are guaranteed after
7. Reference characteristics at 25 C. (This is an indication that reprogramming operations
8. Data retention characteristics when reprogramming is performed correctly within the
The wait time after P bit setting should be changed as follows according to the value of
erase/erase-verify flowchart.
memory control register (FLMCR) is set. It does not include the programming
verification time.)
include the erase verification time.)
flowchart, set the maximum value (1000) for the maximum programming count (N).
the programming counter (n).
wait time after E bit setting (t
To set the maximum erase time, the values of t
the above formula.
Examples: When t
reprogramming. (Reprogramming count from 1 to minimum value is guaranteed.)
can normally be performed up to this figure.)
specification values, including the minimum data retention period.
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
t
E
(max) = Wait time after E bit setting (t
When t
se
se
= 100 [ms], N = 12 times
= 10 [ms], N = 120 times
se
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
se
P
(max)) in the 128-byte programming
)
se
and N should be set so as to satisfy
maximum erase count (N)
t
t
sp30
sp200
sp10
= 30 µs
= 10 µs
= 200 µs