HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 609

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

18.8
As flash memory programming and erasing takes time, it may be difficult to carry out tuning by
writing parameters and other data in real time. In this case, real-time programming of flash
memory can be emulated by overlapping part of RAM (H'FFF000–H'FFF3FF) onto a small block
area in flash memory. This RAM area change is executed by means of bits 3 to 1 in the RAM
control register (RAMCR). After the RAM area change, access is possible both from the area
overlapped onto flash memory and from the original area (H'FFF000–H'FFF3FF). For details of
RAMCR and the RAM area setting method, see section 18.3.4, RAM Control Register (RAMCR).
Example of Emulation of Real-Time Flash Memory Programming: In the following example,
RAM area H'FFF000–H'FFF3FF is overlapped onto flash memory area EB2 (H'000800–
H'000BFF).
Block area
Note: * When part of RAM (H'FFF000–H'FFF3FF) is overlapped onto a flash memory small block area, the flash
EB2
area
Flash Memory Emulation in RAM
memory in the overlapped area cannot be accessed. It can be accessed when the overlapping is
cleared.
H'000000
H'000800
H'000BFF
H'000FFF
Figure 18.14 Example of RAM Overlap Operation
Flash memory
space
*
H'FFEF20
H'FFEFFF
H'FFF000
H'FFF3FF
H'FFF400
H'FFFF1F
Overlapping ram
(Mapping RAM
On-chip RAM
(Actual RAM
area)
area
area)
Section 18 Flash Memory [H8/3024F-ZTAT Version]
Rev. 2.00 Sep 20, 2005 page 569 of 800
Procedure:
1. Part of RAM
2.
3. The programmed data is checked,
4. The data written in RAM area
(H'FFF000–H'FFF3FF) is
overlapped onto the area (EB2)
requiring real-time programming.
(RAMCR bits 3–1 are set to 1, 1, 0,
and the flash memory area to be
overlapped (EB2) is selected.)
performed using the overlapping
RAM.
then RAM overlapping is cleared.
(RAMS bit is cleared.)
H'FFF000–H'FFF3FF is written to
flash memory space.
Real-time programming is
REJ09B0260-0200