HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 541

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

17.6
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes for addresses
H'000000 to H'03FFFF are made by setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program
(user program) that controls flash memory programming/erasing should be located and executed in
on-chip RAM or external memory.
See section 17.11, Flash Memory Programming and Erasing Precautions, for points to be noted
when programming or erasing the flash memory. In the following operation descriptions, wait
times after setting or clearing individual bits in FLMCR1 are given as parameters; for details of
the wait times, see section 21.2.6, Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming must be executed in the erased state. Do not perform additional
Flash Memory Programming/Erasing
P bits in FLMCR1 is executed by a program in flash memory.
executed if FWE = 0).
programming on addresses that have already been programmed.
Section 17 Flash Memory [H8/3026F-ZTAT Version]
Rev. 2.00 Sep 20, 2005 page 501 of 800
REJ09B0260-0200