CSM9S12XDT512SLK Freescale Semiconductor, CSM9S12XDT512SLK Datasheet - Page 1154

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CSM9S12XDT512SLK

Manufacturer Part Number
CSM9S12XDT512SLK
Description
KIT STUDENT LEARNING 16BIT
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of CSM9S12XDT512SLK

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Chapter 28 256 Kbyte Flash Module (S12XFTX256K2V1)
MRDS bits are readable and writable while all remaining bits read 0 and are not writable in normal mode.
The WRALL bit is writable only in special mode to simplify mass erase and erase verify operations. When
writing to the FTSTMOD register in special mode, all unimplemented/reserved bits must be written to 0.
28.3.2.4
The FCNFG register enables the Flash interrupts and gates the security backdoor writes.
1156
MRDS[1:0]
WRALL
Reset
Reset
Field
6:5
4
W
W
R
R
Margin Read Setting — The MRDS[1:0] bits are used to set the sense-amp margin level for reads of the Flash
array as shown in
Write to all Register Banks — If the WRALL bit is set, all banked FDATA registers sharing the same register
address will be written simultaneously during a register write.
0 Write only to the FDATA register bank selected using BKSEL.
1 Write to all FDATA register banks.
Flash Configuration Register (FCNFG)
0
0
0
0
7
7
Figure 28-7. Flash Test Mode Register (FTSTMOD — Special Mode)
Figure 28-6. Flash Test Mode Register (FTSTMOD —Normal Mode)
= Unimplemented or Reserved
= Unimplemented or Reserved
0
0
6
6
1 Flash array reads will be sensitive to program margin.
2 Flash array reads will be sensitive to erase margin.
Table
MRDS
MRDS
MRDS[1:0]
Table 28-7. FTSTMOD Margin Read Settings
Table 28-6. FTSTMOD Field Descriptions
28-7.
00
01
10
11
MC9S12XDP512 Data Sheet, Rev. 2.21
0
0
5
5
WRALL
0
0
0
4
4
Margin Read Setting
Description
Program Margin
Erase Margin
Normal
Normal
0
0
0
0
3
3
2
1
0
0
0
0
2
2
Freescale Semiconductor
0
0
0
0
1
1
0
0
0
0
0
0

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