HD6417727F100CV Renesas Electronics America, HD6417727F100CV Datasheet - Page 394

SH3-DSP, LEAD FREE

HD6417727F100CV

Manufacturer Part Number
HD6417727F100CV
Description
SH3-DSP, LEAD FREE
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of HD6417727F100CV

Core Processor
SH-3 DSP
Core Size
32-Bit
Speed
100MHz
Connectivity
FIFO, SCI, SIO, SmartCard, USB
Peripherals
DMA, LCD, POR, WDT
Number Of I /o
104
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.6 V ~ 2.05 V
Data Converters
A/D 6x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
240-QFP Exposed Pad, 240-eQFP, 240-HQFP
Cpu Family
SuperH
Device Core Size
32b
Frequency (max)
100MHz
Interface Type
SCI/USB
Program Memory Size
Not Required
Total Internal Ram Size
16KB
# I/os (max)
104
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
1.8/3.3V
Operating Supply Voltage (max)
2.05/3.6V
Operating Supply Voltage (min)
1.6/2.6V
On-chip Adc
6-chx10-bit
On-chip Dac
2-chx8-bit
Instruction Set Architecture
RISC
Operating Temp Range
-20C to 75C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
240
Package Type
HQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Lead Free Status / Rohs Status
Compliant
Section 12 Bus State Controller (BSC)
issued for the synchronous DRAM, is inserted between the Tr cycle and the Tc cycle. The number
of cycles from READ and READA command output cycles Tc1 to Tc4 to the first read data latch
cycle, Td1, can be specified as 1 to 3 cycles independently for areas 2 and 3 by means of A2W1
and A2W0 or A3W1 and A3W0 in WCR2. This number of cycles corresponds to the number of
synchronous DRAM CAS latency cycles.
Figure 12.14 shows the burst read timing when RCD is set to 1, A3W1 and A3W0 are set to 10,
and TPC is set to 1.
The BS cycle, which is asserted for one cycle at the start of a bus cycle for normal access space, is
asserted in each of cycles Td1 to Td4 in a synchronous DRAM cycle. When a burst read is
performed, the address is updated each time CAS is asserted. As the unit of burst transfer is 16
bytes, address updating is performed for A3 and A2 only. The order of access is as follows: in a
Rev.6.00 Mar. 27, 2009 Page 336 of 1036
REJ09B0254-0600
CKIO,
CKIO2
A25 to A16,
A13
A12
A15, A14,
A11 to A0
CS2 or CS3
RAS
CAS
RD/WR
DQMxx
D31 to D0
BS
Figure 12.13 Basic Timing for Synchronous DRAM Burst Read
Tr
Tc1
Tc2/Td1
Tc3/Td2
Tc4/Td3
Td4
Tpc

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