MC56F8257MLH Freescale Semiconductor, MC56F8257MLH Datasheet - Page 611

DSC 64K FLASH 60MHZ 64-LQFP

MC56F8257MLH

Manufacturer Part Number
MC56F8257MLH
Description
DSC 64K FLASH 60MHZ 64-LQFP
Manufacturer
Freescale Semiconductor
Series
56F8xxxr

Specifications of MC56F8257MLH

Core Processor
56800E
Core Size
16-Bit
Speed
60MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
54
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Ram Size
4K x 16
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x12b, D/A 1x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
64-LQFP
Product
DSCs
Processor Series
56800E
Core
56800E
Device Million Instructions Per Second
60 MIPs
Maximum Clock Frequency
60 MHz
Number Of Programmable I/os
54
Data Ram Size
8 KB
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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If the operation is to erase a page of flash, the address specified in the 56800E program
memory write instruction must be any one of the addresses within the page to be erased.
If the operation is a mass erase, the address specified in the 56800E program memory
write instruction must be any one of the addresses within the data array. Data in the
56800E program memory write instruction is irrelevant for the erase to proceed.
20.3.4 Flash Commands
The following table summarizes the valid flash commands.
Freescale Semiconductor
FM_CMD
1. Execute a 56800E program memory write instruction.
2. Write the erase command code (0040h or 0041h) to the command register.
3. Write 1 to the CBEIF bit to launch the erase process.
0x05
0x06
0x20
0x40
0x41
CMD
Calculate Data
Erase Verify
Page Erase
Mass Erase
Signature
Meaning
Program
Verify that the flash array is erased. If the array is veri‐
fied to be blank, the BLANK bit sets in the USTAT reg‐
ister upon command completion.
Calculate a signature over user-specified range of
words in the flash array. The resulting signature is re‐
turned in the DATA register at the completion of the
command.
The new signature can be compared with a signature
previously calculated by the user to verify program
flash integrity.
Program a 16-bit word. Programming is only possible
when the protection bit for the applicable sector is not
set.
Erase a specific page (sector) of the flash array. A
page erase is possible only when the PROTECT bit for
the selected page is not set.
Erase all flash memory. A mass erase is possible only
when no PROTECT bits are set.
Description
MC56F825x/4x Reference Manual, Rev. 2, 10/2010
Table 20-13. Flash Commands
Table continues on the next page...
Preliminary
The address must be any address
within the array. Data is ignored.
The array write address specifies
the starting address and data speci‐
fies the number of words to com‐
press.
The address and data specify the
address and value to program.
The address must be any address
within the page to be erased. Data
is ignored.
The address must be any address
within the array. Data is ignored.
Array Write Address/Data Usage
Chapter 20 Flash Memory (HFM)
611

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