R8A77800ANBGAV Renesas Electronics America, R8A77800ANBGAV Datasheet - Page 1210

• Manufacturer Part Number: R8A77800ANBGAV
• Description: IC SUPERH MPU ROMLESS 449-BGA
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7780r

Specifications of R8A77800ANBGAV

• Core Processor: SH-4A
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: Audio Codec, MMC, Serial Sound, SCI, SIO, SPI, SSI
• Peripherals: DMA, POR, WDT
• Number Of I /o: 75
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.35 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 449-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Section 31 Electrical Characteristics
Note: The current dissipation values are for V
Rev.1.00 Dec. 13, 2005 Page 1158 of 1286
REJ09B0158-0100
Item
Input leak
current
Three-state
leak current
Output
voltage
Pull-up
resistance
Pin
capacitance
output pins unload.
DDR pins
All input pins
I/O, all output pins
(off condition)
PCI pins
DDR pins
Other output pins
PCI pins
DDR pins
Other output pins
All pins
DDR pins
Other pins
Symbol
|L|
|lin|
|lsti|
V
V
R
C
OH
OL
pull
L
IH
min = V
Min.
—
—
—
2.4
1.84
2.4
—
—
—
20
—
—
DDQ
Typ. Max.
—
—
—
—
—
—
—
—
—
60
—
—
−0.5 V and V
2
1
1
—
—
—
0.55
0.54
0.55
180
5
10
IL
Unit
µA
µA
V
kΩ
pF
max = 0.5 V with all
Test Conditions
V
−0.5V
V
−0.5V
V
−0.5V
V
I
V
I
V
I
V
I
V
I
V
I
OH
OH
OH
OL
OL
OL
IN
IN
IN
DDQ
CCQ-DDR
DDQ
DDQ
CCQ-DDR
DDQ
= 4mA
= 7.6mA
= 2mA
= −4mA
= −7.6mA
= −2mA
= 0.5, V
= 0.5, V
= 0.5, V
= 3.0 to 3.6V
= 3.0 to 3.6V
= 3.0 to 3.6V
= 3.0 to 3.6V
= 2.3V
= 2.3V
CCQ-DDR
DDQ
DDQ