R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 279

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
Section 7 Bus Controller (BSC)
(2)
Self-Refreshing
A self-refresh mode (battery backup mode) is provided for DRAM as a kind of standby mode. In
this mode, refresh timing and refresh addresses are generated within the DRAM.
To select self-refreshing, set the RFSHE bit and SLFRF bit to 1 in REFCR. When a SLEEP
instruction is executed to enter software standby mode, the CAS and RAS signals are output and
DRAM enters self-refresh mode, as shown in figure 7.51.
When software standby mode is exited, the SLFRF bit is cleared to 0 and self-refresh mode is
exited automatically. If a CBR refresh request occurs when making a transition to software
standby mode, CBR refreshing is executed, and then self-refresh mode is entered.
When using self-refresh mode, the OPE bit must not be cleared to 0 in the SBYCR register.
Software standby
T
T
T
T
Rp
Rr
Rc3
Rc4
φ
RASn (CSn)
UCAS, LCAS
WE (HWR)
High
Note: n = 2 to 5
Figure 7.51 Self-Refresh Timing
REJ09B0565-0100 Rev. 1.00
Page 249 of 1448
Jul 22, 2010