R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 1224

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

H8S/2427, H8S/2427R, H8S/2425 Group
Section 23 Flash Memory
(10) Erasure
Erasure is performed with the erasure selection and block erasure command.
Firstly, erasure is selected by the erasure selection command and the boot program then erases the
specified block. The command should be repeatedly executed if two or more blocks are to be
erased. Sending a block-erasure command from the host with the block number H'FF will stop the
erasure operating. On completion of erasing, the boot program will wait for selection of
programming or erasing.
The sequences of the issuing of erasure selection commands and the erasure of data are shown in
figure 23.18.
Host
Boot program
Preparation for erasure (H'48)
Transfer of erasure
program
ACK
Erasure (Erasure block number)
Repeat
Erasure
ACK
Erasure (H'FF)
ACK
Figure 23.18 Erasure Sequence
Page 1194 of 1448
REJ09B0565-0100 Rev. 1.00
Jul 22, 2010