R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 1408

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Section 28 Electrical Characteristics
28.4.6
Table 28.38 Flash Memory Characteristics
Conditions: V
Notes:
Page 1378 of 1448
Item
Programming and erase
count*
Programming time
(per 4 bytes)
Erase time (per 1 block)
Programming and erase
voltage
Read voltage
Access state
1
1. When programming is to be performed multiple times on a system, reduce the effective number of
2. If an erase error occurs during erasure, execute the clear status command and then the erase
*1. Determination of the number of times for programming/erasure operations.
*2. This is the number of times for which all electrical characteristics are guaranteed.
Flash Memory Characteristics
When the number of times for programming/erasure operations is n (n = 100), data can be erased
For example, if programming of 4 bytes is done 1024 times, each at a different address in a 4-
However, programming of any location in a block multiple times is not possible (overwriting is
programming operations by shifting the writing addresses in sequence and so on until the
remaining blank area is as small as possible and only then erasing the entire block once. For
example, if sets of 16 bytes are being programmed, erasing the block once after programming the
maximum number of sets (256) minimizes the effective number of programming operations.
We recommend keeping information on the number of times erasure is performed for each block,
and setting up the limit on the number of times.
command at least 3 times until the erase error does not occur.
Number of times programming/erasure is performed in each block.
n times in each block.
kbyte per block, and the block is then erased, this counts as programming/erasure one time.
prohibited).
φ = 8 MHz to 33 MHz
CC
= 4.5 V to 5.5 V, AV
Symbol
Test
Conditions Applicable Area
CC
= 4.5 V to 5.5 V, V
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
ref
= 4.5 V to AV
4.5
4.5
1
2
Min.
1,000*
10,000*
⎯
⎯
⎯
⎯
H8S/2427, H8S/2427R, H8S/2425 Group
2
Standard Value
2
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
150
300
300
300
REJ09B0565-0100 Rev. 1.00
CC
, V
SS
⎯
⎯
⎯
⎯
⎯
⎯
5.5
5.5
⎯
⎯
Max.
= AV
SS
Jul 22, 2010
= 0 V,
Unit
Times
μs
ms
V
V
State