R4F24278NVFQU Renesas Electronics America, R4F24278NVFQU Datasheet - Page 240

• Manufacturer Part Number: R4F24278NVFQU
• Description: MCU 512K/48K 2.7-5.5V 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24278NVFQU

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, Smart Card, SPI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 98
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Section 7 Bus Controller (BSC)
7.5.5
The read strobe (RD) timing can be changed for individual areas by setting bits RDN7 to RDN0 to
1 in RDNCR. Figure 7.19 shows an example of the timing when the read strobe timing is changed
in basic bus 3-state access space.
When the DMAC or EXDMAC is used in single address mode, note that if the RD timing is
changed by setting RDNn to 1, the RD timing will change relative to the rise of DACK or
EDACK.
Note: The EXDMAC is not supported by the H8S/2425 Group.
Page 210 of 1448
Read
Read Strobe (RD) Timing
Write
Notes: 1. Upward arrows indicate the timing of WAIT pin sampling.
Address bus
HWR, LWR
Figure 7.18 Example of Wait State Insertion Timing
2. When RDNn = 0
Data bus
Data bus
WAIT
CSn
RD
AS
φ
T
1
T
By program wait
2
T
w
Write data
By WAIT pin
T
w
H8S/2427, H8S/2427R, H8S/2425 Group
T
w
REJ09B0565-0100 Rev. 1.00
T
3
Read
data
Jul 22, 2010