DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 854
![IC H8S/2100 MCU FLASH 80QFP](/photos/12/21/122132/df2134afa20v_sml.jpg)
DF2134AFA20V
Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2134AFA20V.pdf
(1063 pages)
Specifications of DF2134AFA20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 854 of 1063
- Download datasheet (6Mb)
Section 25 Electrical Characteristics
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 4.00 Jun 06, 2006 page 798 of 1004
REJ09B0301-0400
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Maximum programming count (N) should be set according to the actual set value of (z1,
6. Maximum erase time (tE (max))
7. Maximum erase count (N) should be set according to the actual setting (z) to allow
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
tP (max) = (wait time after P-bit setting (z1) + (z3))
The number of times for writing n
1
7
tE (max) = waiting time after E-bit setting (z)
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
z2, z3) to allow programming within the maximum programming time (tP (max)). The
wait time after P-bit setting (z1, z2, z3) must be changed with the value of the number
of writing times (n) as follows.
erase within the maximum erase time (tE (max)).
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
((N) – 6)
n
n
6
1000
z1 = 30 µs, z3 = 10 µs
z2 = 200 µs
Maximum erase count (N)
6 + wait time after P-bit setting (z2)
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