DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 677

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

21.10.10 Notes on Memory Programming
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.
21.11
Precautions concerning the use of on-board programming mode and programmer mode are
summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. For a PROM programmer, use Renesas
Technology microcomputer device types with 128-kbyte or 64-kbyte on-chip flash memory that
support a 5.0 V programming voltage.
Do not select the HN28F101 or use a programming voltage of 3.3 V for the PROM programmer,
and only use the specified socket adapter. Incorrect use will result in damaging the device.
Powering on and off: When applying or disconnecting V
flash memory in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Section 21 ROM
2. Auto-programming should be performed once only on the same address block.
Flash Memory Programming and Erasing Precautions
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
(Mask ROM Version, H8S/2138 F-ZTAT, H8S/2134 F-ZTAT, and H8S/2132 F-ZTAT)
Rev. 4.00 Jun 06, 2006 page 621 of 1004
CC
, fix the RES pin low and place the
REJ09B0301-0400