DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 656

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 21 ROM
21.7
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU and ESU bits in FLMCR2, and the P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, EV, PV, E, and P bits in
21.7.1
Follow the procedure shown in the program/program-verify flowchart in figure 21.12 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
The wait times (x, y, z, , ,
registers 1 and 2 (FLMCR1, FLMCR2) and the maximum number of writes (N) are shown in
section 25, Electrical Characteristics, Flash Memory Characteristics.
Following the elapse of (x) µs or more after the SWE bit is set to 1 in flash memory control
register 1 (FLMCR1), 32-byte program data is stored in the program data area and reprogram data
area, and the 32-byte data in the reprogram data area written consecutively to the write addresses.
The lower 8 bits of the first address written to must be H'00, H'20, H'40, H'60, H'80, H'A0, H'C0,
or H'E0. Thirty-two consecutive byte data transfers are performed. The program address and
program data are latched in the flash memory. A 32-byte data transfer must be performed even if
writing fewer than 32 bytes; in this case, H'FF data must be written to the extra addresses.
Next, the watchdog timer is set to prevent overprogramming in the event of program runaway, etc.
Set a value greater than (y + z +
program mode (program setup) is carried out by setting the PSU bit in FLMCR2, and after the
elapse of (y) µs or more, the operating mode is switched to program mode by setting the P bit in
Rev. 4.00 Jun 06, 2006 page 600 of 1004
REJ09B0301-0400
2. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
Program Mode
FLMCR1, and the ESU and PSU bits in FLMCR2, is executed by a program in flash
memory.
previously programmed addresses.
(Mask ROM Version, H8S/2138 F-ZTAT, H8S/2134 F-ZTAT, and H8S/2132 F-ZTAT)
+ ) µs as the WDT overflow period. After this, preparation for
after setting/clearing individual bits in flash memory control