DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 724
![IC H8S/2100 MCU FLASH 80QFP](/photos/12/21/122132/df2134afa20v_sml.jpg)
DF2134AFA20V
Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2134AFA20V.pdf
(1063 pages)
Specifications of DF2134AFA20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 22 ROM
accessed for verify operations (verification during programming/erasing). Do not clear the SWE
bit during a program, erase, or verify operation.
Do not use interrupts while flash memory is being programmed or erased: All interrupt
requests, including NMI, should be disabled when programming and erasing flash memory to give
priority to program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming. In on-
board programming, perform only one programming operation on a 128-byte programming unit
block. In programmer mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming. Touching either of these can
cause contact faults and write errors.
22.12
The mask ROM version dose not have the internal register for flash memory control that are
provided in the F-ZTAT version. Table 22.22 lists the registers that are present in the F-ZTAT
version but not in the mask ROM version. If a register listed in table 22.22 is read in the mask
ROM version, an undefined value will be returned. Therefore, if application software developed
on the F-ZTAT version is switched to a mask ROM version products, it must be modified to
ensure that the registers in table 22.22 have no effect.
Table 22.22 Registers Present in F-ZTAT Version but Absent in Mask ROM Version
Register
Flash memory control register 1
Flash memory control register 2
Erase block register 1
Erase block register 2
Rev. 4.00 Jun 06, 2006 page 668 of 1004
REJ09B0301-0400
Note on Switching from F-ZTAT Version to Mask ROM Version
(H8S/2138 F-ZTAT A-Mask Version, H8S/2134 F-ZTAT A-Mask Version)
Abbreviation
FLMCR1
FLMCR2
EBR1
EBR2
Address
H'FF80
H'FF81
H'FF82
H'FF83
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