DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 14
![IC H8S/2100 MCU FLASH 80QFP](/photos/12/21/122132/df2134afa20v_sml.jpg)
DF2134AFA20V
Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2134AFA20V.pdf
(1063 pages)
Specifications of DF2134AFA20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Rev. 4.00 Jun 06, 2006 page xii of liv
25.3.2 DC
Characteristics
Table 25.16 DC
Characteristics (3)
25.3.6 Flash Memory
Characteristics
Table 25.27 Flash
Memory Characteristics
(Programming/Erasing
Operating Range)
25.4.2 DC
Characteristics
Table 25.29 DC
Characteristics (1)
Table 25.29 DC
Characteristics (3)
25.5.2 DC
Characteristics
Table 25.40 DC
Characteristics (1)
Item
740
742
756
757
761
766
782
Page
Table 25.16 (3) amended
Note *4 amended
Note: 4. P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull
outputs in H8S/2138. ... P52/SCK0 and P97 (ICE = 0) high
levels are driven by NMOS in H8S/2138.
Table 25.27 amended
Notes 8 to 10 added
Notes: 8. Minimum number of times for which all
characteristics are guaranteed after rewriting (Guarantee
range is 1 to minimum value).
9. Reference value for 25C (as a guide line, rewriting should
normally function up to this value).
10. Data retention characteristics when rewriting is performed
within the specification range, including the minimum value.
Table 25.29 (1) amended
Note *5 added to test conditions for input pull-up MOS current
V
Table 25.40 (1) amended
Revision (See Manual for Details)
Item
Reprogramming count
Data retention time *
Item
Output high
voltage
Item
Three-state
leakage
current
(off state)
Input pull-up
MOS current
Item
Input
pull-up
MOS
current
in
= 0 V, V
All output pins
(except P97, and
P52 *
P97, P52 *
Ports 1 to 3
Port 6
Ports 1 to 6, 8, 9
Ports 1 to 3
Port 6
CC
10
4
) *
5
= 2.7 V *
4
5
to 3.6 V
Symbol Min
V
Symbol Min
–I
Symbol Min
–I
OH
P
I
TSI
P
Symbol Min
N
t
DRP
WEC
V
V
0.5
—
50
60
30
60
CC
CC
–0.5
–1.0
100 *
10
8
Typ
—
—
—
Typ
—
—
Typ Max
—
—
—
Typ
10000 *
—
—
—
—
Max
1.0
300
500
Max
300
600
9
Max
—
—
Unit
V
V
V
Unit
Times
Years
Unit
µA
µA
µA
Unit
µA
µA
Test
Conditions
I
I
I
V = 2.7 to
3.5 V
OH
OH
OH
CC
Test
Conditions
V
= 5 V 10%
Test
Conditions
V
V
V = 0 V, V
= 5 V 10%
= –200 µA
= –1 mA
= –200 µA,
in
CC
in
in
Test
Condition
= 0 V, V
= 0.5 to
–0.5 V
CC
CC
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